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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTA1541T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package facilitates miniaturization in end products. High Allowable Power Dissipation. Complementary to KTC3541T. C L G High Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -30 -30 -5 -1.5 -3 -300 0.9 150 -55 150 ) UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Switching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-30V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-750mA, IB=-15mA IC=-750mA, IB=-15mA VCE=-2V, IC=-100mA VCE=-10V, IC=-300mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-12V 24 OUTPUT MIN. -30 -30 -5 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-500mA 2001. 6. 30 Revision No : 0 I MAXIMUM RATING (Ta=25 ) F H J TSM SF TYP. -250 -0.85 380 25 35 MAX. -0.1 -0.1 -375 -1.2 560 MHz pF UNIT A A V V V mV V - 115 - nS - 30 - 1/3 KTA1541T I C - V CE -2.0 COLLECTOR CURRENT I C (A) -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 DC CURRENT GAIN h FE -50mA A -40m -30mA h FE - I C 1K 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =-2V -20m A -10mA -8mA -6mA -4mA -2mA IB=0mA 100 50 30 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (mV) 10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1 -0.5 -0.3 I C /I B =20 VCE(sat) - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.01 I C /I B =50 -0.1 -0.05 -0.03 75 Ta= Ta= C C = Ta C -25 25 C Ta=75 5C Ta=2 -25 Ta= C -0.01 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE -1.6 -1.4 -1.2 Ta=75 C Ta=25 C Ta=-2 5C VCE =-2V -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -1 -0.5 -0.3 Ta=-25 C Ta=25 C Ta=75 C -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 30 Revision No : 0 2/3 KTA1541T fT - IC TRANSITION FREQUENCY f T (MHz) COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1K 500 300 100 50 30 C ob - V CB f=1MHz 100 50 10 5 3 -0.1 -0.3 -1 -3 -10 -30 VCE =-10V 30 -0.01 -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA -3 COLLECTOR CURRENT I C (A) -1 -0.5 -0.3 I C MAX.(PULSED) 10 S 0 Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) -5 I C MAX (CONTINUOUS) DC OP ER 10 10 1m m S* 50 S* * 0 S* 0m IO S* AT N -0.1 -0.05 -0.03 -0.01 -0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) AMBIENT TEMPERATURE Ta ( C) -30 -50 -0.3 -0.5 -1 -3 -5 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 30 Revision No : 0 3/3 |
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